- Doolittle, W.A. and Kang, S. and Kropewnicki, T.J. and Stock, S. and Kohl, P.A. and Brown, A.S., MBE growth of high quality GaN on LiGaO2,
J. Electron. Mater. (USA), vol. 27 no. 8
pp. 58 - 60 .
(last updated on 2007/04/14)
We report on the growth of high structural quality (as determined by X-ray diffraction) GaN on a near lattice matched substrate, lithium gallate (LiGaO2 or LGO). Low temperature growth conditions are described that result in very thin GaN films (<0.3 μm) with (0004) X-ray diffraction rocking curves full width at half maximum (FWHM) of 145 arc-sec and thicker films (1 μm) resulting in 85 arcsec FWHM. The effect of growth temperature is examined and found to result in a broad minimum in X-ray FWHM around 690°C. Detailed growth conditions and descriptions of the reflection high energy electron diffraction patterns observed during growth are given. Additionally, we report very highly resistive material and doped material with bulk electron mobilities in excess of 100 cm2/V-sec
crystal structure;electron mobility;gallium compounds;III-V semiconductors;lithium compounds;molecular beam epitaxial growth;reflection high energy electron diffraction;semiconductor epitaxial layers;semiconductor growth;wide band gap semiconductors;