- Brown, April S. and Mishra, Umesh K. and Chou, C.S. and Hooper, C.E. and Melendes, M.A. and Thompson, M. and Larson, L.E. and Rosenbaum, S.E. and Delaney, M.J., AlInAs-GaInAs HEMT's utilizing low-temperature AlInAs buffers grown by MBE,
IEEE Electron Device Letters, vol. 10 no. 12
pp. 565 - 567 [55.43141] .
(last updated on 2007/04/14)
Low-temperature AlInAs buffer layers incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE are discussed. A growth temperature of 150°C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic and sidegating and to reduce the output conductance dramatically.
Semiconducting Aluminum Compounds;Crystals--Epitaxial Growth;Millimeter Waves;