- Nguyen, Loi D. and Brown, April S. and Thompson, Mark A. and Jelloian, Linda M. and Larson, Larry E. and Matloubian, Mehran, 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors,
IEEE Electron Device Letters, vol. 13 no. 3
pp. 143 - 145 [55.144991] .
(last updated on 2007/04/14)
The authors report on the design and fabrication of a 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency of over 300 GHz. This work clearly demonstrates the potential of sub-0.1-μm gate-length HEMTs for near-future microwave and millimeter-wave applications.
Semiconducting Aluminum Compounds--Applications;Transistors, High Electron Mobility--Fabrication;Semiconducting Indium Compounds--Applications;Semiconducting Gallium Compounds--Applications;