Publications by April S. Brown.

Papers Published

  1. Nguyen, Loi D. and Brown, April S. and Thompson, Mark A. and Jelloian, Linda M. and Larson, Larry E. and Matloubian, Mehran, 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors, IEEE Electron Device Letters, vol. 13 no. 3 (1992), pp. 143 - 145 [55.144991] .
    (last updated on 2007/04/14)

    Abstract:
    The authors report on the design and fabrication of a 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency of over 300 GHz. This work clearly demonstrates the potential of sub-0.1-μm gate-length HEMTs for near-future microwave and millimeter-wave applications.

    Keywords:
    Semiconducting Aluminum Compounds--Applications;Transistors, High Electron Mobility--Fabrication;Semiconducting Indium Compounds--Applications;Semiconducting Gallium Compounds--Applications;