- Jensen, Joseph F. and Mishra, Umesh K. and Brown, April S. and Salmon, Linton G. and Delaney, M.J., Ultrahigh speed static and dynamic frequency divider circuits,
Microwave Journal, vol. 32 no. 3
pp. 10 - .
(last updated on 2007/04/14)
This paper describes the design, fabrication and testing of high speed GaAs MESFET and AlInAs/GaInAs HEMT frequency divider circuits. GaAs MESFET static frequency dividers operate at frequencies up to 18 GHz, and GaAs MESFET dynamic dividers operate at frequencies up to 26.6 GHz. When the same static divide designs were implemented in AlInAs/GaInAs HEMT technology, the performance improved to frequencies up to 25.4 GHz. Electrooptic testing techniques were used to verify the performance of the GaAs MESFET dividers.
Electronic Equipment Manufacture;Electronic Equipment Testing;Transistors, Field Effect;Semiconducting Gallium Arsenide;Semiconducting Aluminum Compounds;