Publications by April S. Brown.

Papers Published

  1. Metzger, R.A. and Brown, A.S. and McCray, L.G. and Henige, J.A., Structural and electrical properties of low temperature GaInAs, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 3 (1993), pp. 798 - 801 [1.586792] .
    (last updated on 2007/04/14)

    GaInAs lattice matched to InP was grown by molecular-beam epitaxy over a temperature range of 100-450°C and characterized by X-ray diffraction, resistivity, and secondary ion mass spectroscopy, X-ray diffraction analysis indicated the incorporation of excess As for samples grown below 250°C. As-grown GaInAs was n-type with electrical concentration increasing with decreasing growth temperature, ranging from 5×1014 cm-3 (450°C) to 1.8×1017 (150°C). Secondary ion mass spectroscopy indicated that this behavior was not due to the incorporation of background n-type dopants. Be- and Si-doped GaInAs at 5×1018 cm-3 showed full electrical activation for growth temperatures down to 260°C, with only partial activation for Si and no activation for Be for growth temperatures below 260°C

    electronic conduction in crystalline semiconductor thin films;gallium arsenide;III-V semiconductors;indium compounds;molecular beam epitaxial growth;secondary ion mass spectra;semiconductor epitaxial layers;semiconductor growth;X-ray diffraction examination of materials;