- Lee, Kyeong K. and Doolittle, William A. and Brown, April S. and May, Gary S. and Stock, Stuart R., Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy,
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18 no. 3
pp. 1448 - 1452 [1.591401] .
(last updated on 2007/04/14)
The initial growth stage of GaN growth directly on basal plane sapphire substrate is investigated. Statistical experimental design is used for the optimization of processes with a large number of interwoven effects. The effects of growth conditions on electrical and surface morphology are analyzed by means of Hall mobility and atomic force microscopy. The interactions between Ga flux and nitrogen power during the buffer growth are discussed.
Semiconducting gallium compounds;Film growth;Nucleation;Crystal orientation;Substrates;Molecular beam epitaxy;Statistical methods;Nitrogen;Hall effect;Carrier mobility;Atomic force microscopy;Reflection high energy electron diffraction;