- Schmitz, A. E. and Nguyen, L. D. and Brown, A. S. and Metzger, R. A., InP-based inverted high electron mobility transistors,
IEEE Transactions on Electron Devices, vol. 38 no. 12
pp. 2702 - [16.158723] .
(last updated on 2007/04/14)
Summary form only given. The fabrication and characterization of an inverted high-electron-mobility transistor (HEMT) in the AlInAs/GaInAs-on-InP material system are reported. Inverted HEMTs, which have the donor layer beneath the channel, have the potential for higher transconductance, current gain cutoff frequency, and power gain cutoff frequency than conventional HEMTs because the gate can be placed closer to the two-dimensional electron gas (2DEG).
Semiconducting Indium Phosphide;Semiconducting Aluminum Compounds;