- Wang, Zhong L. and Brown, April S. and Wang, Y.Q. and Shen, J.J., Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange,
Solid State Communications, vol. 122 no. 10
pp. 553 - 556 [S0038-1098(02)00212-0] .
(last updated on 2007/04/14)
P/As anion exchange is exploited to modify stacked InAs/GaAs quantum dot structures grown by molecular beam epitaxy (MBE). It is shown that the vertical alignment and size uniformity can be remarkably improved via P/As anion exchange. This, therefore, demonstrates a promising approach to tuning the quantum dot morphologies and structures, and hence, the electronic and optoelectronic properties. © 2002 Elsevier Science Ltd. All rights reserved.
Semiconducting gallium arsenide;Negative ions;Self assembly;Crystal growth;Molecular beam epitaxy;Morphology;