- Mishra, U.K. and Beaubien, R.S. and Delaney, M.J. and Brown, A.S. and Hackett, L.H., MBE grown GaAs MESFETs with ultra-high gm and fT,
International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2)
pp. 829 - 31 .
(last updated on 2007/04/14)
The authors report on the design, fabrication and test performance of GaAs MESFETs with 0.1-μm gate length. The devices were fabricated on epitaxial material grown by molecular beam epitaxy (MBE) on a Riber 2300 system. The main features of the design are discussed
gallium arsenide;III-V semiconductors;molecular beam epitaxial growth;Schottky gate field effect transistors;solid-state microwave devices;