- Brown, A.S. and Mishra, U.K. and Henige, J.A. and Delaney, M.J., The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance,
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 6 no. 2
pp. 678 - 81 [1.584389] .
(last updated on 2007/04/14)
Ga0.47In0.53As-Al0.48In0.52As high-electron-mobility transistors (HEMT's) exhibit high transconductance and gain because of the high conductivities achievable in the structures. The effect of epitaxial layer design (spacer thickness and active channel thickness) on conductivity is examined. Device characteristics are examined as a function of active channel thickness. Reduced output conductance is observed for a 200 Å channel, but with a reduced transconductance
aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;semiconductor epitaxial layers;