- Delaney, M.J. and Chou, C.S. and Larson, L.E. and Jensen, J.F. and Deakin, D.S. and Brown, A.S. and Hooper, W.W. and Thompson, M.A. and McCray, L.G. and Rosenbaum, S.E., GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology,
Proceedings of the Custom Integrated Circuits Conference
pp. 18 - 3 [CICC.1989.56782] .
(last updated on 2007/04/14)
High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a gm of 600 mS/mm and an extrapolated fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz.
Semiconducting Gallium Arsenide;Transistors, Field Effect;Electronic Circuits, Frequency Dividing;