- Triplett, G.E. and May, G.S. and Brown, A.S., Using neural networks for RHEED modeling of interfaces in AlGaSb-InAs HEMT devices,
2002 GaAs MANTECH Conference. Digest of Papers
pp. 157 - 60 .
(last updated on 2007/04/14)
In this paper, it is demonstrated that RHEED data obtained during the formation of the interfaces in AlGaSb-InAs HEMT devices can be used to model device important epitaxial layer electrical performance parameters. RHEED intensity oscillations of the specular spot are analyzed using principle component analysis (PCA) and modeled using error backpropagation (BP) neural networks
aluminium compounds;gallium compounds;high electron mobility transistors;III-V semiconductors;indium compounds;neural nets;reflection high energy electron diffraction;semiconductor device models;