- Delaney, M.J. and Chou, C.S. and Larson, Lawrence E. and Jensen, Joseph F. and Deakin, D.S. and Brown, April S. and Hooper, William W. and Thompson, M.A. and McCray, L.G. and Rosenbaum, Steven E., Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications,
IEEE Electron Device Letters, vol. 10 no. 8
pp. 355 - 357 [55.31755] .
(last updated on 2007/04/14)
The fabrication of high-performance digital integrated circuits with low-temperature buffer (LTB) GaAs MESFET technology is presented. Individual 0.2-μm-gate-length transistors show a gm of 600 mS/mm and an extrapolated fT of 80 GHz. Backgating and light sensitivity are eliminated with the LTB technology. Static source-coupled FET logic frequency dividers exhibit a maximum clock rate of 22 GHz.
Transistors, Field Effect;Semiconducting Gallium Arsenide;Logic Devices;