- Mishra, U.K. and Jensen, J.F. and Rensch, D.B. and Brown, A.S. and Pierce, M.W. and McCray, L.G. and Kargodorian, T.V. and Hoefer, W.S. and Kastris, R.E., 48 GHz AlInAs/GaInAs heterojunction bipolar transistors,
Technical Digest - International Electron Devices Meeting
pp. 873 - 875 [IEDM.1988.32948] .
(last updated on 2007/04/14)
The authors report on the DC and RF performance of self-aligned Al0.48In0.52As-Ga0.47In0.53As heterojunction bipolar transistors. The properties that make the AlInAns/GalnAs material system extremely attractive for heterojunction bipolar transistors are discussed. The epitaxial layer structure was grown by molecular beam epitaxy on semi-insulating InP. The device structure is shown in cross section. A large variety of heterojunction bipolar transistor devices with different emitter sizes and with different numbers of emitter fingers have been fabricated. The common emitter characteristics of a single 5-μm × 5-μm emitter are reported.
Semiconducting Aluminum Compounds;Semiconducting Gallium Compounds;Band Structure;Molecular Beam Epitaxy;Microwave Measurements;