- Yi, Changhyun and Metzger, Robert A. and Brown, April S., The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors,
Journal of Electronic Materials, vol. 31 no. 8
pp. 841 - 847 .
(last updated on 2007/04/14)
Strained AlxIn1-xAs/Ga0.47In0.53As heterojunction N-p+ diodes and heterojunction bipolar transistors (HBTs) have been grown on InP substrates by solid-source molecular-beam epitaxy, fabricated, and characterized. To determine the effects of the conduction-band discontinuity at the emitter-base heterojunction on turn-on voltage and ideality factor, a strained Al0.7In0.3As layer is inserted in the emitter near the base. Changes in transport across the junction are observed as a function of the strained-layer position and thickness. These results were used to implement strained emitter HBTs.
Semiconducting aluminum compounds;Semiconductor diodes;Heterojunction bipolar transistors;Computer simulation;Electric field effects;Molecular beam epitaxy;Electron transport properties;Carrier concentration;Thermionic emission;Electron tunneling;Electron mobility;Band structure;