- Matloubian, M. and Nguyen, L. D. and Brown, A. S. and Larson, L. E. and Melendes, M. A. and Thompson, M. A., High power and high efficiency AlInAs/GaInAs on InP HEMTs,
IEEE MTT-S International Microwave Symposium Digest, vol. 2
pp. 721 - 724 [MWSYM.1991.147105] .
(last updated on 2007/04/14)
The authors report on the development of AlInAs/GaInAs-on-InP power HEMTs (high electron mobility transistors). Output power densities of more than 730 mW/mm and 960 mW/mm with power-added efficiencies (PAE) of 50% and 40%, respectively, were achieved at 12 GHz. When biased for maximum efficiency, a PAE of 59% and an output power of 470 mW/mm with 11.3 dB gain were obtained. These results demonstrate the viability of these HEMTs for power amplification. Considering that these HEMTs have an fmax of over 200 GHz, they should also have good power performance at millimeter-wave frequencies.
Microwave Measurements;Amplifiers, Power Type;