- Namkoong, Gon and Doolittle, W. Alan and Brown, April S. and Losurdo, Maria and Capezzuto, Pio and Bruno, Giovanni, Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy,
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20 no. 3
pp. 1221 - 1228 [1.1470514] .
(last updated on 2007/04/14)
The effects of sapphire nitridation temperature on the properties of GaN grown by radiofrequency (rf) plasma assisted molecular-beam epitaxy (MBE) were discussed. It was found that the optical and structural characteristics of GaN epitaxial layers were dramatically improved at a nitridation temperatutre of 200 °C. The analysis showed that the nitridation temperature was a crucial parameter in improvement of the optical and structural quality of GaN epitaxial layers.
Gallium nitride;Molecular beam epitaxy;Nitriding;Sapphire;Surface chemistry;Optical properties;Diffusion;Low temperature effects;High temperature effects;Ellipsometry;X ray photoelectron spectroscopy;Secondary ion mass spectrometry;