- Matloubian, M. and Jelloian, L.M. and Brown, A.S. and Nguyen, L.D. and Larson, L.E. and Delaney, M.J. and Thompson, M.A. and Rhodes, R.A. and Pence, J.E., V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs,
IEEE MTT-S International Microwave Symposium Digest, vol. 2
pp. 535 - 537 [MWSYM.1993.276882] .
(last updated on 2007/04/14)
In this paper we report on the stage-of-the-art power performance of InP-based HEMTs at 59 GHz. Using a 448 μm wide HEMT with a gate-length of 0.15 μm, an output power of 155 mW with 4.9 dB gain, and power-added efficiency of 30.1% were obtained. By power combining two of these HEMTs we were able to achieve an output power of 288 mW with 3.6 dB gain and power-added efficiency of 20.4%. This is the highest output power reported with such a high-efficiency for InP-based HEMTs, and is comparable to the best results reported for AlGaAs/InGaAs on GaAs pseudomorphic HEMTs at this frequency.
Performance;Semiconducting indium phosphide;Semiconducting gallium compounds;Semiconductor device structures;