Publications by April S. Brown.

Papers Published

  1. Matloubian, M. and Jelloian, L.M. and Brown, A.S. and Nguyen, L.D. and Larson, L.E. and Delaney, M.J. and Thompson, M.A. and Rhodes, R.A. and Pence, J.E., V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs, IEEE MTT-S International Microwave Symposium Digest, vol. 2 (1993), pp. 535 - 537 [MWSYM.1993.276882] .
    (last updated on 2007/04/14)

    In this paper we report on the stage-of-the-art power performance of InP-based HEMTs at 59 GHz. Using a 448 μm wide HEMT with a gate-length of 0.15 μm, an output power of 155 mW with 4.9 dB gain, and power-added efficiency of 30.1% were obtained. By power combining two of these HEMTs we were able to achieve an output power of 288 mW with 3.6 dB gain and power-added efficiency of 20.4%. This is the highest output power reported with such a high-efficiency for InP-based HEMTs, and is comparable to the best results reported for AlGaAs/InGaAs on GaAs pseudomorphic HEMTs at this frequency.

    Performance;Semiconducting indium phosphide;Semiconducting gallium compounds;Semiconductor device structures;