Publications by April S. Brown.

Papers Published

  1. Mishra, Umesh K. and Jensen, Joseph F. and Rensch, D.B. and Brown, April S. and Stanchina, William E. and Trew, Robert J. and Pierce, M.W. and Kargodorian, Tsolag V., Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits, IEEE Electron Device Letters, vol. 10 no. 10 (1989), pp. 467 - 469 [55.43102] .
    (last updated on 2007/04/14)

    AlInAs-GaInAs heterojunction bipolar transistors (HBTs) and static flip-flop frequency dividers have been fabricated. An ft and an fmax of 49 and 62 GHz, respectively, have been achieved in a device with a 2 x 5-μm2 emitter. Current-mode logic (CML) was used to implement static divide-by-two and divide-by-four circuits. The divide-by-two circuit operated at 15 GHz with 82-mW power dissipation for the single flip-flop. The divide-by-four circuit operated at 14.5 GHz with a total chip power dissipation of 444 mW.

    Semiconducting Aluminum Compounds;Semiconducting Gallium Compounds;Integrated Circuits;Electronic Circuits, Flip Flop;Electronic Circuits, Frequency Dividing;