- Mishra, Umesh K. and Jensen, Joseph F. and Rensch, D.B. and Brown, April S. and Stanchina, William E. and Trew, Robert J. and Pierce, M.W. and Kargodorian, Tsolag V., Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits,
IEEE Electron Device Letters, vol. 10 no. 10
pp. 467 - 469 [55.43102] .
(last updated on 2007/04/14)
AlInAs-GaInAs heterojunction bipolar transistors (HBTs) and static flip-flop frequency dividers have been fabricated. An ft and an fmax of 49 and 62 GHz, respectively, have been achieved in a device with a 2 x 5-μm2 emitter. Current-mode logic (CML) was used to implement static divide-by-two and divide-by-four circuits. The divide-by-two circuit operated at 15 GHz with 82-mW power dissipation for the single flip-flop. The divide-by-four circuit operated at 14.5 GHz with a total chip power dissipation of 444 mW.
Semiconducting Aluminum Compounds;Semiconducting Gallium Compounds;Integrated Circuits;Electronic Circuits, Flip Flop;Electronic Circuits, Frequency Dividing;