- Bicknell-Tassius, Robert N. and Lee, Kyeong and Brown, April S. and Dagnall, Georgianna and May, Gary, Growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects utilizing the design of experiments approach,
Journal of Crystal Growth, vol. 175-176 no. pt 2
pp. 1131 - 1137 [S0022-0248(96)01210-9] .
(last updated on 2007/04/14)
The traditional approach to determine relationships between growth conditions and material properties has rested on the standard experimental approach - varying one parameter while holding all others constant. This technique does not effectively allow the observation of important interactions in complicated multilayer structures. Critical interdependent effects have been observed in the growth of AlGaAs/InGaAs quantum-well structures by molecular beam epitaxy (MBE). It is shown that statistical experimental design is an effective method for optimizing complex multilayer structures quickly. This technique is very useful for the optimization of processes with a large number of interdependent parameters and allows for the clear visualization and separation of complex interwoven effects. In the present work, we show for the first time the importance of the oxide desorption process for the optimal growth of AlGaAs-containing structures. The choice of an optimized oxide desorption process can lead to a decrease in the interfacial oxygen by almost two orders of magnitude.
Semiconducting aluminum compounds;Semiconducting indium compounds;Molecular beam epitaxy;Semiconductor growth;Statistical methods;Semiconducting gallium arsenide;Semiconductor device structures;