- Shen, J.-J. and Kim, T.-H. and Brown, A.S., Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates,
IEEE International Symposium on Compound Semiconductors, Proceedings
pp. 131 - 135 [ISCS.2000.947142] .
(last updated on 2007/04/14)
InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm2/V at 300K. The surface morphology showed undulations. X-ray rocking curve analysis shows differences in lattice constants between the samples grown on control substrates and the oxide-bonded substrates.
High electron mobility transistors;Semiconducting indium gallium arsenide;Electric properties;Electron mobility;Morphology;Lattice constants;X ray analysis;