- Seo, Sangwoo and Kang, Sangbeom and Doolittle, William A. and Lee, K.K. and Huang, S. and Jokerst, N.M. and Brown, A.S. and Brooke, M.A., The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon,
IEEE Photonics Technology Letters, vol. 14 no. 2
pp. 185 - 187 [68.980507] .
(last updated on 2007/04/14)
The heterogeneous integration of GaN thin-film metal-semiconductor-metal (MSM) photodetectors onto a host substrate of SiO2-Si is reported herein. Thin-film GaN photodetectors were separated from the lithium gallate (LiGaO2) growth substrate using selective etching, and contact bonded onto an SiO2-Si host substrate. The thin-film MSMs exhibited a dark current of 13.36 pA and an UV photoresponse at 308 nm of 0.11 A/W at a reverse bias voltage of 20 V. This first demonstration of GaN thin-film device integration onto SiO2-Si using a low-temperature integration process, combined with the advances in GaN material quality on LiGaO2 substrates, enables the integration of GaN devices with Si circuitry for heterogeneously integrated systems.
Thin film devices;Gallium nitride;Semiconducting silicon;Silica;Low temperature operations;Etching;Substrates;Lithium compounds;Molecular beam epitaxy;