- Brown, J.J. and Brown, A.S. and Rosenbaum, S.E. and Schmitz, A.S. and Matloubian, M. and Larson, L.E. and Melendes, M.A. and Thompson, M.A., Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout,
IEEE Trans. Electron Devices (USA), vol. 40 no. 11
pp. 2111 - 12 [16.239781] .
(last updated on 2007/04/14)
Summary form only given. A systematic study of the improvement of Ga0.47In0.53As/Alx In1-xAs HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga0.47In0.53As/Alx In1-xAs on InP device with a sheet of charge placed at the center of the 300 Å wide channel. The device with a gate length of 0.5 μm, a source-drain spacing of 5μm, and an Al0.7In0.3As Schottky layer exhibited the best breakdown characteristics of |BVgd|=6.8 V and BVds=7.8 V. The typical transistor had a maximum transconductance of 500 mS/mm, a full channel current of 700 mA/mm for a gate bias of 0.4 V, and a current gain cutoff frequency of over 80 GHz. The power performance was measured on 500-μm-wide devices at 4 GHz and Vds=4.5 V. Under Class AB operating conditions, the output power density, power-added efficiency, and power gain were 0.45 W/mm, 59%, and 14.25 dB, respectively
aluminium compounds;electric breakdown of solids;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;power transistors;Schottky effect;solid-state microwave devices;