- Zakharov, N.D. and Liliental-Weber, Z. and Swider, W. and Washburn, J. and Brown, A.S. and Metzger, R., Ordering in InGaAs/InAlAs layers,
Journal of Electronic Materials, vol. 22 no. 12
pp. 1495 - 1498 .
(last updated on 2007/04/14)
The structure of InGaAs/InAlAs layers lattice matched to an InP substrate, grown on either (100) or on (110) with a 4° tilt toward [111 over-bar ] at 500 and 300°C has been investigated by transmission electron microscopy. High perfection resulted for the layers grown on  oriented substrates whereas growth on the near  substrates resulted in compositional nonuniformities, macrosteps formation, and ordering of the group III elements. This difference in structural perfection between the two sets of samples was also reflected in differences in electrical properties.
Semiconducting gallium arsenide;Semiconducting indium compounds;Crystal structure;Crystal lattices;Transmission electron microscopy;Order disorder transitions;