Publications by April S. Brown.

Papers Published

  1. Mishra, Umesh K. and Brown, April S. and Rosenbaum, S.E. and Hooper, C.E. and Pierce, M.W. and Delaney, M.J. and Vaughn, S. and White, K., Microwave performance of AlInAs-GaInAs HEMT's with 0.2- and 0.1-μm gate length, IEEE Electron Device Letters, vol. 9 no. 12 (1988), pp. 647 - 649 [55.20424] .
    (last updated on 2007/04/14)

    The millimeter-wave performance is reported for Al0.48In0.52As-Ga0.47In0.53As high-electron-mobility transistors (HEMTs) with 0.2-μm and 0.1-μm-long gates on material grown by molecular-beam epitaxy on semi-insulating InP substrates. Devices of 50-μm width exhibited extrinsic transconductances of 800 and 1080 mS/mm, respectively. External fT (maximum frequency of oscillation) of 120 and 135 GHz, respectively, were measured. A maximum fT of 170 GHz was obtained from a 0.1 × 200-μm2 device. A minimum noise figure of 0.8 dB and associated gain of 8.7 dB were obtained from a single-stage amplifier at frequencies near 63 GHz.

    Molecular Beam Epitaxy;Semiconducting Indium Compounds;Amplifiers;