- Mishra, Umesh K. and Brown, April S. and Rosenbaum, S.E. and Hooper, C.E. and Pierce, M.W. and Delaney, M.J. and Vaughn, S. and White, K., Microwave performance of AlInAs-GaInAs HEMT's with 0.2- and 0.1-μm gate length,
IEEE Electron Device Letters, vol. 9 no. 12
pp. 647 - 649 [55.20424] .
(last updated on 2007/04/14)
The millimeter-wave performance is reported for Al0.48In0.52As-Ga0.47In0.53As high-electron-mobility transistors (HEMTs) with 0.2-μm and 0.1-μm-long gates on material grown by molecular-beam epitaxy on semi-insulating InP substrates. Devices of 50-μm width exhibited extrinsic transconductances of 800 and 1080 mS/mm, respectively. External fT (maximum frequency of oscillation) of 120 and 135 GHz, respectively, were measured. A maximum fT of 170 GHz was obtained from a 0.1 × 200-μm2 device. A minimum noise figure of 0.8 dB and associated gain of 8.7 dB were obtained from a single-stage amplifier at frequencies near 63 GHz.
Molecular Beam Epitaxy;Semiconducting Indium Compounds;Amplifiers;