- Brown, A.S. and Henige, J.A. and Delaney, M.J., Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures,
Appl. Phys. Lett. (USA), vol. 52 no. 14
pp. 1142 - 3 [1.99185] .
(last updated on 2007/04/14)
GaInAs-AlInAs quantum well structures have been analyzed by low-temperature photoluminescence. The photoluminescence linewidth (full width at half-maximum) of thicker quantum wells (>10 nm) grown directly on AlInAs buffer layers shows that an inverse relationship exists between interface quality and AlInAs alloy quality in agreement with the theoretical analysis of J. Singh, S. Dudley, B. Davies, and K.K. Bajaj [J. Appl. Phys. 60, 3167 (1986)]. Thinner wells show much improved luminescence properties due to a growth of previous wells
aluminium compounds;gallium arsenide;III-V semiconductors;indium compounds;luminescence of inorganic solids;photoluminescence;semiconductor superlattices;