- Carter-Coman, Carrie and Bicknell-Tassius, Robert and Brown, April S. and Jokerst, Nan Marie, Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction,
Applied Physics Letters, vol. 70 no. 13
pp. 1754 - 1756 [1.118647] .
(last updated on 2007/04/14)
Five consecutive InGaAs-GaAs growths are conducted simultaneously on GaAs-based thin film compliant substrates and thick reference substrates using double crystal x-ray diffraction. The In0.07Ga0.93As layers are grown to thicknesses below and above the conventional critical thickness. It is found that InGaAs films grown on the compliant substrates have a larger critical thickness and slow strain relief than InGaAs grown on conventional substrates.
X ray crystallography;Semiconducting gallium arsenide;Crystal growth;Thin films;Bonding;Strain;Lattice constants;Calculations;Crystal defects;