- Mishra, U. K. and Beaubien, R. S. and Delaney, M. J. and Brown, A. S. and Hackett, L. H., LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE.
pp. 177 - 189 .
(last updated on 2007/04/14)
It is demonstrated that by applying proper scaling techniques, high-performance 0. 1- mu m-gate-length GaAs MESFETs can be routinely fabricated. The noise performance of these devices compares favorably with that of state-of-the-art HEMT structures. The performance is limited at the present time by the parasitic device elements, namely, the source resistance, gate resistance, drain resistance, and output conductance. It is clear that using T-gate structures and further optimization of the epitaxial profiles will address these issues in the future.
SEMICONDUCTOR DEVICES, FIELD EFFECT - Noise;SEMICONDUCTING GALLIUM ARSENIDE - Applications;MOLECULAR BEAM EPITAXY - Applications;