- Mishra, U.K. and Brown, A.S. and Jensen, J.F., High performance AlInAs-GaInAs HEMTs and HBTs,
Gallium Arsenide and Related Compounds 1989. Proceedings of the Sixteenth International Symposium
pp. 605 - 12 .
(last updated on 2007/04/14)
AlInAs-GaInAs HEMTs with ft>2000 GHz and minimum noise figure of 0.8 dB at 63.5 GHz have been fabricated. Ring oscillators with gate delay of 6 pS and static dividers with operating frequency of 26.7 GHz have been demonstrated. AlInAs-GaInAs HBTs with fT of 49 GHz, fmax of 62 GHz have been achieved. The maximum operating frequency of static dividers was 15 GHz
aluminium compounds;gallium arsenide;heterojunction bipolar transistors;high electron mobility transistors;III-V semiconductors;indium compounds;semiconductor junctions;