Papers Published

1. Mishra, U.K. and Brown, A.S. and Jensen, J.F., High performance AlInAs-GaInAs HEMTs and HBTs, Gallium Arsenide and Related Compounds 1989. Proceedings of the Sixteenth International Symposium (1990), pp. 605 - 12 .
   (last updated on 2007/04/14)

   Abstract:
   AlInAs-GaInAs HEMTs with f_t>2000 GHz and minimum noise figure of 0.8 dB at 63.5 GHz have been fabricated. Ring oscillators with gate delay of 6 pS and static dividers with operating frequency of 26.7 GHz have been demonstrated. AlInAs-GaInAs HBTs with f_T of 49 GHz, f_max of 62 GHz have been achieved. The maximum operating frequency of static dividers was 15 GHz

   Keywords:
   aluminium compounds;gallium arsenide;heterojunction bipolar transistors;high electron mobility transistors;III-V semiconductors;indium compounds;semiconductor junctions;