- Dwyer, C. and Vicci, L. and Taylor, R. M., Performance Simulation of Nanoscale Silicon Rod Field-Effect Transistor Logic,
IEEE Transactions on Nanotechnology, vol. 2
pp. 69--74 .
(last updated on 2012/04/03)
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RG-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a customized SPICE 3f5 kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline. Our simulation results, SPICE kernel modifications, and input decks may be found at ftp://ftp.cs.unc.edu/pub/packages/GRIP/publication\_addenda/TSNSRFET.