- Dwyer, C. and Vicci, L. and Taylor, R.M., Performance simulation of nanoscale silicon rod field-effect transistor logic,
IEEE Trans. Nanotechnol. (USA), vol. 2 no. 2
pp. 69 - 74 [TNANO.2003.812592] .
(last updated on 2007/04/17)
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RG-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a customized SPICE 3f5 kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline
digital simulation;electronic engineering computing;field effect logic circuits;field effect transistors;logic gates;nanoelectronics;self-assembly;semiconductor device models;silicon;