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Publications by Jeffrey T. Glass.

Papers Published

  1. S. Natarajan and C. B. Parker and J. T. Glass and J. R. Piascik and K. H. Gilchrist and C. A. Bower and B. R. Stoner, High voltage microelectromechanical systems platform for fully integrated, on-chip, vacuum electronic devices, Applied Physics Letters, vol. 92 no. 22 (June, 2008)  [abs].
  2. S. Naskar and S. D. Wolter and C. A. Bower and B. R. Stoner and J. T. Glass, Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study, Journal Of Materials Research, vol. 23 no. 5 (May, 2008), pp. 1433 -- 1442  [abs].
  3. B. Brown and S. D. Wolter and B. R. Stoner and J. T. Glass, Alloying effects of cosputtered gold-platinum thin films on the oxygen reduction reaction in acidic electrolyte, Journal Of The Electrochemical Society, vol. 155 no. 8 (2008), pp. B852 -- B859  [abs].
  4. R. D. Evans and G. L. Doll and W. J. Meng and F. Mei and J. T. Glass, Effects of applied substrate bias during reactive sputter deposition of nanocomposite tantalum carbide/amorphous hydrocarbon thin films, Thin Solid Films, vol. 515 no. 13 (May, 2007), pp. 5403 -- 5410  [abs].
  5. C. A. Bower and K. H. Gilchrist and J. R. Piascik and B. R. Stoner and S. Natarajan and C. B. Parker and S. D. Wolter and J. T. Glass, On-chip electron-impact ion source using carbon nanotube field emitters, Applied Physics Letters, vol. 90 no. 12 (March, 2007)  [abs].
  6. Bower, Christopher A. and Gilchrist, Kristin H. and Piascik, Jeffrey R. and Stoner, Brian R. and Natarajan, Srividya and Parker, Charles B. and Wolter, Scott D. and Glass, Jeffrey T., On-chip electron-impact ion source using carbon nanotube field emitters, Applied Physics Letters, vol. 90 no. 12 (2007), pp. 124102 - [1.2715457]  [abs].
  7. X. D. Zhang and J. S. Lewis and S. D. Wolter and C. B. Parker and J. T. Glass, High sensitivity permeation measurement system for "ultrabarrier" thin films, Journal Of Vacuum Science \& Technology A, vol. 25 no. 6 (2007), pp. 1587 -- 1593  [abs].
  8. Bower, C.A. and Gilchrist, K.H. and Broderick, S. and Piascik, J.R. and Stoner, B.R. and Parker, C.B. and Natarajan, S. and Wolter, S.D. and Glass, J.T., High voltage compatible micromachined vacuum electronic devices with carbon nanotube cold cathode, 2006 IEEE International Vacuum Electronics Conference held jointly with 2006 IEEE International Vacuum Electron Sources (IEEE Cat. No.06EX1278) (2006), pp. 2 pp. -  [abs].
  9. Evans, Ryan D. and Doll, Gary L. and Glass, Jeffrey T., Mechanical property development in reactively sputtered tantalum carbide/amorphous hydrocarbon thin films, Journal of Materials Research, vol. 21 no. 6 (2006), pp. 1500 - 1511 [0174]  [abs].
  10. Nemanich, Robert J. and Glass, Jeffrey T., ICNDST and ADC 2006 presents latest research in diamond and related materials, MRS Bulletin, vol. 31 no. 9 (2006), pp. 696 -  [abs].
  11. Evans, Ryan D. and Howe, Jane Y. and Bentley, James and Doll, Gary L. and Glass, Jeffrey T., Influence of deposition parameters on the composition and structure of reactively sputtered nanocomposite TaC/a-C:H thin films, Journal of Materials Research, vol. 20 no. 9 (2005), pp. 2583 - 2596 [0324]  [abs].
  12. Naskar, S. and Bower, C.A. and Wolter, S.D. and Stoner, B.R. and Glass, J.T., Improved optical loss characteristics of PECVD silicon oxynitride films using low frequency plasma, Amorphous and Nanocrystalline Silicon Science and Technology-2005. Symposium (Materials Research Society Symposium Proceedings Vol.862) (2005), pp. 61 - 6  [abs].
  13. Yang, P.C. and Prater, J.T. and Liu, W. and Glass, J.T. and Davis, R.F., The formation of epitaxial hexagonal boron nitride on nickel substrates, Journal of Electronic Materials, vol. 34 no. 12 (2005), pp. 1558 - 1564  [abs].
  14. Naskar, S. and Bower, C.A. and Yadon, L.N. and Wolter, S.D. and Stoner, B.R. and Glass, J.T., Effect of growth parameters on refractive index and film composition of plasma enhanced chemical vapor deposition silicon oxynitride films, Solid-State Chemistry of Inorganic Materials V (Materials Research Society Symposium Proceedings Vol. 848) (2005), pp. 171 - 6  [abs].
  15. Naskar, S. and Bower, C.A. and Weiter, S.D. and Stoner, B.R. and Glass, J.T., Improved optical loss characteristics of PECVD silicon oxynitride films using low frequency plasma, Materials Research Society Symposium Proceedings, vol. 862 (2005), pp. 61 - 66  [abs].
  16. Naskar, Sudipto and Wolter, Scott D. and Bower, Christopher A. and Stoner, Brian R. and Glass, Jeffrey T., Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films, Applied Physics Letters, vol. 87 no. 26 (2005), pp. 261907 - [1.2158022]  [abs].
  17. Evans, R.D. and Bentley, J. and More, K.L. and Doll, G.L. and Glass, J.T., Radial distribution function analyses of amorphous carbon thin films containing various levels of silicon and hydrogen, Journal of Applied Physics, vol. 96 no. 1 (2004), pp. 273 - 279 [1.1760232]  [abs].
  18. Holmes, Joseph S. and Glass, Jeffrey T., Internal R and D - Vital but only one piece of the innovation puzzle, Research Technology Management, vol. 47 no. 5 (2004), pp. 7 - 10  [abs].
  19. Purswani, J.M. and Pons, A.P. and Glass, J.T. and Evans, R.D. and Cogdell, J.D., Effects of annealing on the mechanical and electrical properties of DC sputtered tantalum pentoxide (Ta2O5) thin films, Materials Research Society Symposium Proceedings, vol. 811 (2004), pp. 63 - 68  [abs].
  20. Glass, Jeffrey T. and Ensing, Ingrid Morris and DeSanctis, Gerardine, Managing the ties between central R and D and business units, Research Technology Management, vol. 46 no. 1 (2003), pp. 24 - 31  [abs].
  21. Evans, Ryan D. and Doll, Gary L. and Morrison Jr., Philip W. and Bentley, James and More, Karren L. and Glass, Jeffrey T., Relationships between the structural, chemical, and mechanical properties of Si-aC:H thin films, Materials Research Society Symposium - Proceedings, vol. 697 (2002), pp. 261 - 270  [abs].
  22. Evans, Ryan D. and Doll, Gary L. and Morrison Jr, Philip W. and Bentley, James and More, Karren L. and Glass, Jeffrey T., The effects of structure, composition, and chemical bonding on the mechanical properties of Si-aC:H thin films, Surface and Coatings Technology, vol. 157 no. 2-3 (2002), pp. 197 - 206 [S0257-8972(02)00164-0]  [abs].
  23. Evans, Ryan D. and Doll, Gary L. and Glass, Jeffrey T., Relationships between the thermal stability, friction, and wear properties of reactively sputtered Si-aC:H thin films, Journal of Materials Research, vol. 17 no. 11 (2002), pp. 2888 - 2896  [abs].
  24. Glass, J.T. and Fox, B.A. and Dreifus, D.L. and Stoner, B.R., Diamond for electronics: Future prospects of diamond SAW devices, MRS Bulletin, vol. 23 no. 9 (1998), pp. 49 - 55  [abs].
  25. Glass, J.T. and McCann, J.F. and Crothers, D.S.F. and Momberger, K., Radiative electron capture by relativistic heavy ions, Proceedings of the Royal Society of London, Series A: Mathematical, Physical and Engineering Sciences, vol. 453 no. 1957 (1997), pp. 387 - 402 [0022] .
  26. Yang, P.C. and Liu, W. and Tucker, D.A. and Wolden, C.A. and Davis, R.F. and Glass, J.T. and Prater, J.T. and Sitar, Z., Nucleation and growth of oriented diamond films on nickel substrates, Materials Research Society Symposium - Proceedings, vol. 423 (1996), pp. 281 - 286  [abs].
  27. McCann, J.F. and Glass, J.T. and Crothers, D.S.F., Energy dependence of relativistic nonradiative electron capture, Journal of Physics B: Atomic, Molecular and Optical Physics, vol. 29 no. 24 (1996), pp. 6155 - 6164 [021]  [abs].
  28. Goeller, P.T. and Wang, Z. and Sayers, D.E. and Glass, J.T. and Nemanich, R.J., Epitaxial films of cobalt disilicide (100) evaporated onto Si (100) from a mixed source, Silicide Thin Films - Fabrication, Properties, and Applications. Symposium (1996), pp. 511 - 16  [abs].
  29. Liu, W. and Yang, P.C. and Tucker, D.A. and Wolden, C.A. and Davis, R.F. and Glass, J.T. and Prater, J.T. and Sitar, Z., TEM analysis of the observed phases during the growth of oriented diamond on nickel substrates, III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium (1996), pp. 457 - 62  [abs].
  30. Yang, P.C. and Liu, W. and Tucker, D.A. and Wolden, C.A. and Davis, R.F. and Glass, J.T. and Prater, J.T. and Sitar, Z., Nucleation and growth of oriented diamond films on nickel substrates, III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium (1996), pp. 281 - 6  [abs].
  31. Glass, J.T. and McCann, J.F. and Crothers, D.S.F., Second-order relativistic electron capture, Z. Phys. D, At. Mol. Clusters (Germany), vol. 36 no. 2 (1996), pp. 119 - 24  [abs].
  32. Liu, J. and Zhirnov, V.V. and Myers, A.F. and Wojak, G.J. and Choi, W.B. and Hren, J.J. and Wolter, S.D. and McClure, M.T. and Stoner, B.R. and Glass, J.T., Field emission characteristics of diamond coated silicon field emitters, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 13 no. 2 (1995), pp. 422 - 426 [1.587961]  [abs].
  33. Wolter, S.D. and McClure, M.T. and Glass, J.T. and Stoner, B.R., Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates, Applied Physics Letters, vol. 66 no. 21 (1995), pp. 2810 - [1.113483] .
  34. McClure, M.T. and Wolter, S.D. and Glass, J.T. and Stoner, B.R., Titanium as a potential heteroepitaxial substrate for diamond, Proceedings of the Fourth International Symposium on Diamond Materials (1995), pp. 124 - 9  [abs].
  35. Tucker, D.A. and Seo, D.-K. and Whangbo, M.-H. and Sivazlian, F.R. and Stoner, B.R. and Bozeman, S.P. and Sowers, A.T. and Nemanich, R.J. and Glass, J.T., Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth, Surface Science, vol. 334 no. 1-3 (1995), pp. 179 - 194 [0039-6028(95)00469-6]  [abs].
  36. Liu, Wei and Tucker, Denise A. and Yang, Peichun and Glass, Jeffrey T., Nucleation of oriented diamond particles on cobalt substrates, Journal of Applied Physics, vol. 78 no. 2 (1995), pp. 1291 - [1.360768] .
  37. Morrison, Philip W. Jr. and Somashekhar, Ambika and Glass, Jeffrey T. and Prater, John T., Growth of diamond films using an enclosed combustion flame, Journal of Applied Physics, vol. 78 no. 6 (1995), pp. 4144 - [1.359874] .
  38. McCann, J.F. and Glass, J.T. and Crothers, D.S.F., X-ray emission in relativistic ion-atom collisions, AIP Conf. Proc. (USA) no. 360 (1995), pp. 857 - 66  [abs].
  39. Bozeman, S.P. and Tucker, D.A. and Stoner, B.R. and Glass, J.T. and Hooke, W.M., Diamond deposition using a planar radio frequency inductively coupled plasma, Applied Physics Letters, vol. 66 no. 26 (1995), pp. 3579 - [1.113793] .
  40. Zhu, W. and Sivazlian, F.R. and Stoner, B.R. and Glass, J.T., Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition, Journal of Materials Research, vol. 10 no. 2 (1995), pp. 425 - 430  [abs].
  41. Wolter, S.D. and Glass, J.T. and Stoner, B.R., Investigation of the process factor space on bias-enhanced nucleation of diamond on silicon, Thin Solid Films, vol. 261 no. 1-2 (1995), pp. 4 - 11 [0040-6090(94)06432-6]  [abs].
  42. Zhu, W. and Yang, P.C. and Glass, J.T. and Arezzo, F., Diamond nucleation and growth on reactive transition-metal substrates, Journal of Materials Research, vol. 10 no. 6 (1995), pp. 1455 - 1460  [abs].
  43. Liu, J. and Zhirnov, V.V. and Wojak, G.J. and Myers, A.F. and Choi, W.B. and Hren, J.J. and Wolter, S.D. and McClure, M.T. and Stoner, B.R. and Glass, J.T., Electron emission from diamond coated silicon field emitters, Appl. Phys. Lett. (USA), vol. 65 no. 22 (1994), pp. 2842 - 4 [1.112538]  [abs].
  44. Proceedings of the 4th European Conference on Diamond, Diamond-Like and Related Materials, edited by Bachmann, Peter K.;Buckley-Golder, Ian M.;Glass, Jeffrey T.;Kamo, Mutzukazu;, Diamond and Related Materials, vol. 3 no. 4-6 (1994), pp. -  [abs].
  45. Bergman, L. and McClure, M.T. and Glass, J.T. and Nemanich, R.J., Recombination processes of the broadband and 1.681 eV optical centers in diamond films, Diamond, SiC and Nitride Wide Bandgap Semiconductors. Symposium (1994), pp. 663 - 8  [abs].
  46. McClure, Michael T. and von Windheim, Josko A. and Glass, Jeffrey T. and Prater, John T., Effect of native SiO2 layer on the nucleation of diamond using a combustion flame, Diamond and Related Materials, vol. 3 no. 3 (1994), pp. 239 - 244 [0925-9635(94)90086-8]  [abs].
  47. Wolter, S.D. and Stoner, B.R. and Yang, P.C. and Lui, W. and Glass, J.T., Diamond nucleation studies on refractory metals and nickel, Materials Research Society Symposium - Proceedings, vol. 339 (1994), pp. 291 - 296  [abs].
  48. Morrison, P.W., Jr. and Somashekhar, A. and Glass, J.T. and Prater, J.T., Nucleation enhancement and growth of diamond films using an enclosed combustion flame, Novel Forms of Carbon II Symposium (1994), pp. 403 - 8  [abs].
  49. Glass, J.T. and McCann, J.F. and Crothers, D.S.F., Asymmetric theories of relativistic electron capture, Journal of Physics B: Atomic, Molecular and Optical Physics, vol. 27 no. 17 (1994), pp. 3967 - .
  50. Wolter, S.D. and Stoner, B.R. and Glass, J.T., Effect of substrate material on bias-enhanced diamond nucleation, Diamond and Related Materials, vol. 3 no. 9 (1994), pp. 1188 - 1195 [0925-9635(94)90167-8]  [abs].
  51. Sivazlian, F.R. and Glass, J.T. and Stoner, B.R., Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy, Journal of Materials Research, vol. 9 no. 10 (1994), pp. 2487 - 2489  [abs].
  52. Yang, P.C. and Zhu, W. and Glass, J.T., Diamond nucleation on nickel substrates seeded with non-diamond carbon, Journal of Materials Research, vol. 9 no. 5 (1994), pp. 1063 - 1066  [abs].
  53. Bergman, L. and McClure, M.T. and Glass, J.T. and Nemanich, R.J., Origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films, Journal of Applied Physics, vol. 76 no. 5 (1994), pp. 3020 - 3027 [1.357508]  [abs].
  54. Bergman, L. and McClure, M.T. and Glass, J.T. and Nemanich, R.J., Recombination processes of the broadband and 1.681 eV optical centers in diamond films, Materials Research Society Symposium - Proceedings, vol. 339 (1994), pp. 663 - 668  [abs].
  55. Glass, J.T. and McCann, J.F. and Crothers, D.S.F., Relativistic continuum distorted wave theory for electron capture, Journal of Physics B: Atomic, Molecular and Optical Physics, vol. 27 no. 15 (1994), pp. 3445 - [020] .
  56. Tachibana, T. and Glass, J.T. and Nemanich, R.J., Effect of surface hydrogen on metal-diamond interface properties, Journal of Applied Physics, vol. 73 no. 2 (1993), pp. 835 - [1.353322] .
  57. Bade, J.P. and Sahaida, S.R. and Stoner, B.R. and von Windheim, J.A. and Glass, J.T. and Miyata, K. and Nishimura, K. and Kobashi, K., Fabrication of diamond thin-film thermistors for high-temperature applications, Diamond and Related Materials, vol. 2 no. 5-7 pt 2 (1993), pp. 816 - 819 [0925-9635(93)90230-Y]  [abs].
  58. Yang, P.C. and Zhu, W. and Glass, J.T., Nucleation of oriented diamond films on nickel substrates, Journal of Materials Research, vol. 8 no. 8 (1993), pp. 1773 - 1776  [abs].
  59. Zhu, W. and Wang, X.H. and Stoner, B.R. and Kong, H.S. and Braun, M.W.H. and Glass, J.T., Geometric modeling of the diamond-β-SiC heteroepitaxial interface, Diamond and Related Materials, vol. 2 no. 2-4 pt 1 (1993), pp. 590 - 596 [0925-9635(93)90127-N]  [abs].
  60. Tachibana, T. and Glass, J.T., Correlation of interface chemistry to electrical properties of metal contacts on diamond, Diamond and Related Materials, vol. 2 no. 5-7 pt 2 (1993), pp. 963 - 969 [0925-9635(93)90259-5]  [abs].
  61. Wang, X.H. and Zhu, W. and von Windheim, J. and Glass, J.T., Combustion growth of large diamond crystals, Journal of Crystal Growth, vol. 129 no. 1-2 (1993), pp. 45 - 55 [0022-0248(93)90432-V]  [abs].
  62. Zhu, W. and Yang, P.C. and Glass, J.T., Oriented diamond films grown on nickel substrates, Applied Physics Letters, vol. 63 no. 12 (1993), pp. 1640 - [1.110721] .
  63. von Windheim, J.A. and Sivazlian, F. and McClure, M.T. and Glass, J.T. and Prater, J.T., Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch, Diamond and Related Materials, vol. 2 no. 2-4 pt 1 (1993), pp. 438 - 442 [0925-9635(93)90097-L]  [abs].
  64. Stoner, B.R. and Ma, G.H. and Wolter, S.D. and Zhu, W. and Wang, Y.-C. and Davis, R.F. and Glass, J.T., Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition, Diamond and Related Materials, vol. 2 no. 2-4 pt 1 (1993), pp. 142 - 146 [0925-9635(93)90045-4]  [abs].
  65. Tachibana, T. and Glass, J.T. and Thompson, D.G., Titanium carbide rectifying contacts on boron-doped polycrystalline diamond, Diamond and Related Materials, vol. 2 no. 1 (1993), pp. 37 - 40 [0925-9635(93)90139-S]  [abs].
  66. Bergman, L. and Stoner, B.R. and Turner, K.F. and Glass, J.T. and Nemanich, R.J., Microphotoluminescence and Raman scattering study of defect formation in diamond films, J. Appl. Phys. (USA), vol. 73 no. 8 (1993), pp. 3951 - 7 [1.352858]  [abs].
  67. Zhu, W. and Wang, X.H. and Stoner, B.R. and Ma, G.H.M. and Kong, H.S. and Braun, M.W.H. and Glass, J.T., Diamond and β-SiC heteroepitaxial interfaces: a theoretical and experimental study, Phys. Rev. B, Condens. Matter (USA), vol. 47 no. 11 (1993), pp. 6529 - 42 [6529]  [abs].
  68. Wolter, S.D. and Stoner, B.R. and Glass, J.T. and Ellis, P.J. and Buhaenko, D.S. and Jenkins, C.E. and Southworth, P., Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation, Appl. Phys. Lett. (USA), vol. 62 no. 11 (1993), pp. 1215 - 17 [1.108738]  [abs].
  69. Glass, J.T. and McCann, J.F. and Crothers, D.S.F., Electron capture at semirelativistic energies: distorted wave models, J. Phys. B, At. Mol. Opt. Phys. (UK), vol. 25 no. 21 (1992), pp. 541 - 4 [004]  [abs].
  70. McClure, M.T. and von Windheim, J.A. and Glass, J.T. and Prater, J.T., Early nucleation of diamond in a combustion flame, Novel Forms of Carbon Symposium (1992), pp. 323 - 8  [abs].
  71. Das, K. and Venkatesan, V. and Miyata, K. and Dreifus, D.L. and Glass, J.T., Review of the electrical characteristics of metal contacts on diamond, Thin Solid Films, vol. 212 no. 1-2 (1992), pp. 19 - 24 [0040-6090(92)90494-V]  [abs].
  72. Sivazlian, F.R. and von Windheim, J.A. and Glass, J.T., Diamond growth in an oxy-acetylene flame by an alternating gas ratio technique, Novel Forms of Carbon Symposium (1992), pp. 329 - 34  [abs].
  73. Williams, Brad, E. and Glass, Jeffrey, T. and Davis, Robert, F., Defect and interface structures of diamond thin films, R&D, Research and Development (Kobe Steel, Ltd), vol. 42 no. 2 (1992), pp. 13 - 16  [abs].
  74. Wolter, S.D. and Stoner, B.R. and Ma, G.-H.M. and Glass, J.T., In-vacuo surface analytical study of diamond nucleation on copper vs. silicon, Novel Forms of Carbon Symposium (1992), pp. 347 - 52  [abs].
  75. Stoner, B.R. and Glass, J.T. and Bergman, L. and Nemanich, R.J. and Zoltal, L.D. and Vandersande, J.W., Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD, Journal of Electronic Materials, vol. 21 no. 6 (1992), pp. 0 -  [abs].
  76. Stoner, B.R. and Williams, B.E. and Wolter, S.D. and Nishimura, K. and Glass, J.T., In situ growth rate measurement and nucleation enhancement for microwave plasma CVD of diamond, Journal of Materials Research, vol. 7 no. 2 (1992), pp. 257 - 260  [abs].
  77. von Windheim, Jesko A. and Glass, Jeffrey T., Improved uniformity and selected area deposition of diamond by the oxy-acetylene flame method, Journal of Materials Research, vol. 7 no. 8 (1992), pp. 2144 - 2150  [abs].
  78. Fenner, D.B. and Li, Q. and Morrison, P.W. and Cosgrove, J. and Lynds, L. and Johansson, M.E. and Stoner, B.R. and Glass, J.T. and Xu, P. and Zhang, H., Pulsed laser deposition of CdTe, HgCdTe, and β-SiC thin films on silicon, Materials Modification by Energetic Atoms and Ions Symposium (1992), pp. 235 - 40  [abs].
  79. Stoner, B.R. and Glass, J.T., Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition, Applied Physics Letters, vol. 60 no. 6 (1992), pp. 698 - [1.106541] .
  80. Tachibana, T. and Glass, J.T., Effects of argon presputtering on the formation of aluminum contacts on polycrystalline diamond, Journal of Applied Physics, vol. 72 no. 12 (1992), pp. 5912 - [1.351899] .
  81. Angus, John C. and Sunkara, Mahendra and Sahaida, Scott R. and Glass, Jeffrey T., Twinning and faceting in early stages of diamond growth by chemical vapor deposition, Journal of Materials Research, vol. 7 no. 11 (1992), pp. 3001 - 3009  [abs].
  82. Stoner, B.R. and von Windheim, J.A. and Glass, J.T. and Zoltan, D. and Vandersande, J.W., Electrical conductivity as a function of temperature of diamond films grown by downstream microwave plasma chemical vapor deposition, Novel Forms of Carbon Symposium (1992), pp. 413 - 18  [abs].
  83. Stoner, B.R. and Glass, J.T. and Bergman, L. and Nemanich, R.J. and Zoltal, L.D. and Vandersande, J.W., Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD, J. Electron. Mater. (USA), vol. 21 no. 6 (1992), pp. 629 - 34  [abs].
  84. Tachibana, T. and Williams, B.E. and Glass, J.T., Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. I. Gold contacts: a non-carbide-forming metal, Phys. Rev. B, Condens. Matter (USA), vol. 45 no. 20 (1992), pp. 11968 - 74 [PhysRevB.45.11968]  [abs].
  85. Tachibana, T. and Williams, B.E. and Glass, J.T., Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. II. Titanium contacts: a carbide-forming metal, Phys. Rev. B, Condens. Matter (USA), vol. 45 no. 20 (1992), pp. 11975 - 81 [PhysRevB.45.11975]  [abs].
  86. Stoner, B.R. and Ma, G.-H.M. and Wolter, S.D. and Glass, J.T., Characterization of bias-enhanced nucleation of diamond on silicon by in vacuo surface analysis and transmission electron microscopy, Phys. Rev. B, Condens. Matter (USA), vol. 45 no. 19 (1992), pp. 11067 - 84 [PhysRevB.45.11067]  [abs].
  87. Wang, X.H. and Ma, G.-H.M. and Wei Zhu and Glass, J.T. and Bergman, L. and Turner, K.F. and Nemanich, R.J., Effects of boron doping on the surface morphology and structural imperfections of diamond films, Diam. Relat. Mater. (Netherlands), vol. 1 no. 7 (1992), pp. 828 - 35 [0925-9635(92)90109-2]  [abs].
  88. Miyauchi, S. and Kumagai, K. and Miyata, K. and Nishimura, K. and Kobashi, K. and Nakaue, A. and Glass, Jeffrey T. and Buckley-Golder, Ian M., Microfabrication of diamond films. Selective deposition and etching, Surface & Coatings Technology, vol. 47 no. 1-3 (1991), pp. 465 - 473 [0257-8972(91)90312-K]  [abs].
  89. Proceedings of the Second International Conference. New Diamond Science and Technology, edited by Messier, R.;Glass, J.T.;Butler, J.E.;Roy, R.; (1991), pp. xx+1128 -  [abs].
  90. Ma, G.-H. M. and Williams, B.E. and Glass, J.T. and Prater, J.T., Analysis via transmission electron microscopy of the quality of diamond films deposited from the vapor phase, Diamond and Related Materials, vol. 1 no. 1 (1991), pp. 25 - 32 [0925-9635(91)90008-X]  [abs].
  91. Zhu, Wei and Stoner, Brian R. and Williams, Brad E. and Glass, Jeffrey T., Growth and characterization of diamond films on nondiamond substrates for electronic applications, Proceedings of the IEEE, vol. 79 no. 5 (1991), pp. 621 - 646 [5.90129]  [abs].
  92. Das, K. and Venkatesan, V. and Miyata, K. and Dreifus, D.L. and Glass, J.T., Review of the electrical characteristics of metal contacts on diamond, Materials Science Monographs, vol. 73 (1991), pp. 301 - .
  93. Geis, M.W. and Smith, H.I. and Argoitia, A. and Angus, J. and Ma, G.-H.M. and Glass, J.T. and Butler, J. and Robinson, C.J. and Pryor, R., Large-area mosaic diamond films approaching single-crystal quality, Appl. Phys. Lett. (USA), vol. 58 no. 22 (1991), pp. 2485 - 7 [1.104851]  [abs].
  94. Turner, K.F. and Stoner, B.R. and Bergman, L. and Glass, J.T. and Nemanich, R.J., Observation of surface modification and nucleation during deposition of diamond on silicon by scanning tunneling microscopy, J. Appl. Phys. (USA), vol. 69 no. 9 (1991), pp. 6400 - 5 [1.348843]  [abs].
  95. Turner, K.F. and LeGrice, Y.M. and Stoner, B.R. and Glass, J.T. and Nemanich, R.J., Surface topography and nucleation of chemical vapor deposition diamond films on silicon by scanning tunneling microscopy, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 9 no. 2 (1991), pp. 914 - 19 [1.585494]  [abs].
  96. Nishimura, K. and Das, K. and Glass, J.T., Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor deposition, J. Appl. Phys. (USA), vol. 69 no. 5 (1991), pp. 3142 - 8 [1.348582]  [abs].
  97. Braun, M.W.H. and Kong, H.S. and Glass, J.T. and Davis, R.F., The role of geometric considerations in the diamond-cubic boron nitride heteroepitaxial system, J. Appl. Phys. (USA), vol. 69 no. 4 (1991), pp. 2679 - 81 [1.348663]  [abs].
  98. Lee, Y.H. and Bachmann, K.J. and Glass, J.T. and LeGrice, Y.M. and Nemanich, R.J., Vapor deposition of diamond thin films on various substrates, Appl. Phys. Lett. (USA), vol. 57 no. 18 (1990), pp. 1916 - 18 [1.104011]  [abs].
  99. Yu, Cheng Wang and Hua, Shuang Kong and Glass, Jeffrey T. and Davis, Robert F. and More, Karren L., Effect of substrate orientation on interfacial and bulk character of chemically vapor deposited monocrystalline silicon carbide thin films, Journal of the American Ceramic Society, vol. 73 no. 5 (1990), pp. 1289 - 1296  [abs].
  100. Kobashi, Koji and Nakaue, Akimitsu and Glass, Jeffrey T. and Buckley-Golder, Ian M., Properties and applications of vapor grown diamond, Carbon, vol. 28 no. 6 (1990), pp. 756 - 757 [0008-6223(90)90272-Z]  [abs].
  101. Williams, B.E. and Glass, J.T. and Davis, Robert F. and Kobashi, K., Analysis of defect structures and substrate/film interfaces of diamond thin films, Journal of Crystal Growth, vol. 99 no. 1-4 pt 2 (1990), pp. 1168 - 1176  [abs].
  102. Ma, G.-H.M. and Lee, Y.H. and Glass, J.T., Electron microscopic characterization of diamond films grown on Si by bias-controlled chemical vapor deposition, Journal of Materials Research, vol. 5 no. 11 (1990), pp. 2367 - 2377  [abs].
  103. Buckley-Golder, I.M. and Chalker, P.R. and Glass, J.T. and Kobashi, K. and Nakaue, A., Determination of impurity dopant distributions in diamond films by SIMS, Carbon, vol. 28 no. 6 (1990), pp. 801 - [0008-6223(90)90311-L]  [abs].
  104. More, Karren L. and Hua, Shuang Kong and Glass, Jeffrey T. and Davis, Robert F., Electron microscopy of defects in epitaxical β-SiC thin films grown on silicon and carbon 0001 faces of α-SiC substrates, Journal of the American Ceramic Society, vol. 73 no. 5 (1990), pp. 1283 - 1288  [abs].
  105. Williams, B.E. and Kong, H.S. and Glass, J.T., Electron microscopy of vapor phase deposited diamond, Journal of Materials Research, vol. 5 no. 4 (1990), pp. 801 - 810  [abs].
  106. Murphy, J. and Glass, J.T. and Majerowicz, S. and Green, R.E. Jr., Laser interferometric probe for detection of acoustic emission, Materials Evaluation, vol. 48 no. 6 (1990), pp. 714 - .
  107. Shroder, R.E. and Nemanich, R.J. and Glass, J.T., Analysis of the composite structures in diamond thin films by Raman spectroscopy, Phys. Rev. B, Condens. Matter (USA), vol. 41 no. 6 (1990), pp. 3738 - 45 [3738]  [abs].
  108. Lee, Y.H. and Richard, P.D. and Bachmann, K.J. and Glass, J.T., Bias-controlled chemical vapor deposition of diamond thin films, Appl. Phys. Lett. (USA), vol. 56 no. 7 (1990), pp. 620 - 2 [1.102716]  [abs].
  109. Glass, Jeffrey T. and Cahen, George L. Jr. and Stoner, Glenn E., Effect of phosphoric acid concentration on electrocatalysis, Journal of the Electrochemical Society, vol. 136 no. 3 (1989), pp. 656 - 660  [abs].
  110. Kong, H.S. and Edmond, J.A. and Palmour, J.W. and Glass, J.T. and Davis, R.F., Epitaxial growth, high temperature ion implantation and MOSFET fabrication in monocrystalline β-SiC thin films, Amorphous and Crystalline Silicon Carbide and Related Materials. Proceedings of the First International Conference (1989), pp. 180 - 5  [abs].
  111. Ryu, J. and Kim, H.J. and Glass, J.T. and Davis, R.F., Effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen, Journal of Electronic Materials, vol. 18 no. 2 (1989), pp. 157 - 165  [abs].
  112. Kong, H.S. and Glass, J.T. and Davis, R.F., Growth rate, surface morphology, and defect microstructures of β-SiC films chemically vapor deposited on 6H-SiC substrates, Journal of Materials Research, vol. 4 no. 1 (1989), pp. 204 - 214  [abs].
  113. Williams, B.E. and Glass, J.T. and Davis, R.F. and Kobashi, K. and More, K.L., Microstructural characterization of diamond thin films, Proceedings - The Electrochemical Society, vol. 89 no. 12 (1989), pp. 202 - .
  114. Williams, B.E. and Glass, J.T., Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures, Journal of Materials Research, vol. 4 no. 2 (1989), pp. 373 - 384  [abs].
  115. Bumgarner, John W. and Kong, Hua-Shuang and Kim, Hyeong J. and Palmour, John W. and Edmond, John A. and Glass, Jeffrey T. and Davis Robert F. ,, MONOCRYSTALLINE beta -SIC SEMICONDUCTOR THIN FILMS: EPITAXIAL GROWTH, DOPING, AND FET DEVICE DEVELOPMENT., Proceedings - Electronic Components Conference (1988), pp. 342 - 349 [ECC.1988.12615]  [abs].
  116. Davis, R.F. and Sitar, Z. and Williams, B.E. and Kong, H.S. and Kim, H.J. and Palmour, J.W. and Edmond, J.A. and Ryu, J. and Glass, J.T. and Carter, C.H. Jr., Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide, Materials Science & Engineering B: Solid-State Materials for Advanced Technology, vol. B1 no. 1 (1988), pp. 77 - 104 [0921-5107(88)90032-3]  [abs].
  117. Glass, J.T. and Williams, B.E. and Davis, R.F., Chemical vapor deposition and characterization of diamond films grown via microwave plasma enhanced CVD, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 877 (1988), pp. 56 - 63  [abs].
  118. Edmond, J. A. and Ryu, J. and Glass, J. T. and Davis, R. F., ELECTRICAL CONTACTS TO BETA SILICON CARBIDE THIN FILMS., Journal of the Electrochemical Society, vol. 135 no. 2 (1988), pp. 359 - 362  [abs].
  119. Glass, J.T. and Cahen, G.L., Jr., The electrochemical stability and calculated free energies of PtCr alloys, J. Electrochem. Soc. (USA), vol. 135 no. 7 (1988), pp. 1650 - 8  [abs].
  120. Kong, H.S. and Wang, Y.C. and Glass, J.T. and Davis, R.F., The effect of off-axis Si (100) substrates on the defect structure and electrical properties of β-SiC thin films, J. Mater. Res. (USA), vol. 3 no. 3 (1988), pp. 521 - 30  [abs].
  121. Nemanich, R.J. and Glass, J.T. and Lucovsky, G. and Shroder, R.E., Raman scattering characterization of carbon bonding in diamond and diamondlike thin films, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 6 no. 3 (1988), pp. 1783 - 7 [1.575297]  [abs].
  122. Kim, H.J. and Kong, H. and Edmond, J.A. and Ryu, J. and Palmour, J. and Carter, C.H., Jr. and Glass, J.T. and Davis, R.F., Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 6 no. 3 (1988), pp. 1954 - 6 [1.575214]  [abs].
  123. Williams, B.E. and Glass, J.T. and Davis, R.F. and Kobashi, K. and Horiuchi, T., Structural and chemical characterization of diamond films and diamond-substrate interfaces, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 6 no. 3 (1988), pp. 1819 - 20 [1.575261]  [abs].
  124. Kong, H.S. and Jiang, B.L. and Glass, J.T. and Rozgonyi, G.A. and More, K.L., An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates, J. Appl. Phys. (USA), vol. 63 no. 8 (1988), pp. 2645 - 50 [1.341004]  [abs].
  125. Kong, H. and Kim, H.J. and Edmond, J.A. and Palmour, J.W. and Ryu, J. and Carter, C.H., Jr. and Glass, J.T. and Davis, R.F., Growth, doping, device development and characterization of CVD beta-SiC epilayers on Si(100) and alpha-SiC(0001), Novel Refractory Semiconductors Symposium (1987), pp. 223 - 45  [abs].
  126. Glass, Jeffrey T. and Cahen, George L. Jr. and Stoner, Glenn E., EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES OF PtCr ALLOYS., Journal of the Electrochemical Society, vol. 134 no. 1 (1987), pp. 58 - 65  [abs].
  127. Kong, H.S. and Glass, J.T. and Davis, R.F. and Nutt, S.R., Growth and characterization of chemically vapor deposited beta-SiC epilayers on 6H alpha-SiC substrates, Interfaces, Superlattices, and Thin Films Symposium (1987), pp. 405 - 10  [abs].
  128. Kim, H.J. and Edmond, J.A. and Ryu, J. and Kong, H. and Carter, C.H. Jr. and Glass, J.T. and Davis, R.F., Epitaxial growth, doping and analytical characterization of monocrystalline beta-SiC semiconductor thin flims, International SAMPE Symposium and Exhibition, vol. 1 (1987), pp. 370 - 381  [abs].
  129. Kong, H.S. and Palmour, J.W. and Glass, J.T. and Davis, R.F., Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition, Appl. Phys. Lett. (USA), vol. 51 no. 6 (1987), pp. 442 - 4 [1.98416]  [abs].
  130. Kong, H.S. and Glass, J.T. and Davis, R.F., Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition, Appl. Phys. Lett. (USA), vol. 49 no. 17 (1986), pp. 1074 - 6 [1.97479]  [abs].
  131. Glass, Jeffrey T. and Cahen, George L. Jr. and Stoner, Glenn E., DETERMINATION OF THE EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES AT PtCr ALLOYS., Proceedings - The Electrochemical Society, vol. 86-10 (1986), pp. 231 - 256  [abs].
  132. Glass, Jeffrey T. and Green, Robert E., ACOUSTIC EMISSION DURING DEFORMATION AND FRACTURE OF THREE NAVAL ALLOY STEELS., Materials Evaluation, vol. 43 no. 7 (1985), pp. 864 - 872  [abs].
  133. Kohl, R. and Wild, C. and Herres, N. and Koidl, P. and Stoner, B.R. and Glass, J.T., Oriented nucleation and growth of diamond films on β-SiC and Si, Appl. Phys. Lett. (USA), vol. 63 no. 13 (27), pp. 1792 - 4 [1.110664]  [abs].
  134. Glass, J.T. and McCann, J.F. and Crothers, D.S.F., Asymmetric theories of relativistic electron capture, J. Phys. B, At. Mol. Opt. Phys. (UK), vol. 27 no. 17 (14), pp. 3975 - 84 [021]  [abs].
  135. Kong, H.S. and Glass, J.T. and Davis, R.F., Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates, J. Appl. Phys. (USA), vol. 64 no. 5 (1), pp. 2672 - 9 [1.341608]  [abs].