Publications by Jungsang Kim.

Papers Published

  1. McKay, K.S. and Lu, F.P. and Jungsang Kim and Changhyun Yi and Brown, A.S. and Hawkins, A.R., Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction, Appl. Phys. Lett. (USA), vol. 90 no. 22 (2007), pp. 222111 - 1 [1.2745254] .
    (last updated on 2007/11/03)

    p-type InGaAs/Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and -0.1 eV, respectively, indicating a type-II band alignment.

    chemical interdiffusion;conduction bands;elemental semiconductors;gallium arsenide;III-V semiconductors;indium compounds;interface states;semiconductor heterojunctions;silicon;thermionic electron emission;valence bands;