- McKay, K.S. and Lu, F.P. and Jungsang Kim and Changhyun Yi and Brown, A.S. and Hawkins, A.R., Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction,
Appl. Phys. Lett. (USA), vol. 90 no. 22
pp. 222111 - 1 [1.2745254] .
(last updated on 2007/11/03)
p-type InGaAs/Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and -0.1 eV, respectively, indicating a type-II band alignment.
chemical interdiffusion;conduction bands;elemental semiconductors;gallium arsenide;III-V semiconductors;indium compounds;interface states;semiconductor heterojunctions;silicon;thermionic electron emission;valence bands;