Papers Published

1. Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, edited by Massoud, H.Z.;Stathis, J.H.;Hattori, T.;Misra, D.;Baumvol, I.;, ECS Transactions, vol. 1 no. 1 (2005), pp. 310 - .
   (last updated on 2007/04/15)

   Abstract:
   The proceedings contain 25 papers. The topics discussed include: ordered structure in the thermal oxide layer on silicon substrates; quantitative analysis of reaction of hydrogen-terminated Si (100) with oxygen during heating; focused electron beam induced deposition of silicon dioxide; improvement in characteristics of thin film transistors by high pressure steam annealing; three-dimensional simulation of thermal oxidation and the influence of stress; stress modulation of PECVD silicon nitride; progressive breakdown in ultra-thin gate oxynitrides; characterization of microstructural and oxide damage of breakdown spot in MOSFET using nano-analytical techniques; and the influence of complimentary contamination on oxide integrity.

   Keywords:
   Substrates;Electron beams;Hydrogen;Thin film transistors;Microstructure;Plasma enhanced chemical vapor deposition;