- Sang-Woo Seo and Cheolung Cha and Sang-Yeon Cho and Sa Huang and Jokerst, N.M. and Brooke, M.A. and Brown, A.S., Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors,
2004 IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581), vol. Vol.1
pp. 222 - 3 .
(last updated on 2007/04/11)
A significant enhancement of the impulse response and capacitance performance of thin film I-MSMs has been demonstrated through etching, while still preserving the thickness of the absorbing region. Thus, the traditional tradeoff between device output current, as defined by device diameter and absorbing layer thickness and capacitance/speed, has been alleviated through etching enhancement
etching;gallium arsenide;III-V semiconductors;indium compounds;metal-semiconductor-metal structures;photodetectors;thin film devices;