Papers Published

1. Twyford, Elizabeth J. and Carter, Carrie A. and Kohl, Paul A. and Jokerst, Nan Marie, Influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs, Applied Physics Letters, vol. 67 no. 9 (1995), pp. 1182 - 1184 [1.115000] .
   (last updated on 2007/04/16)

   Abstract:
   Etching gratings into an epitaxial AlGaAs layer, as compared to a GaAs layer, is a simple and effective technique for photoelectrochemical (PEC) etching 0.3 μm period gratings. This technique enabled first order gratings for a waveguide outcoupler to be made. It is shown that gratings etch with about three times the ratio of grating depth to total etch when etched in Al_0.3Ga_0.7As rather than GaAs. The lower hole mobility of AlGaAs was proposed as a possible explanation for this grating resolution improvement.

   Keywords:
   Semiconducting aluminum compounds;Composition effects;Aluminum;Semiconducting gallium arsenide;Waveguide couplers;Diffraction gratings;Interferometers;Electrolytes;Diffusion;