Papers Published

1. Jokerst, N.M. and Garmire, E., Nonlinear optical absorption in semiconductor epitaxial depletion regions, Appl. Phys. Lett. (USA), vol. 53 no. 10 (5), pp. 897 - 9 [1.100108] .
   (last updated on 2007/04/16)

   Abstract:
   The authors have observed an optically induced decrease in absorption near the band-gap energy in a single-heterostructure Schottky barrier depletion region. Photogenerated carriers created and trapped in the unbiased depletion region cause a dynamic decrease in the absorption. This depletion region electric-field absorption modulator (DREAM) exhibits nonlinear optical absorption which relies upon carrier transport induced by an electric field without an external circuit applied to the device. They demonstrate a factor of two change in absorption at peak powers of 2 mW (0.2 W/cm²)

   Keywords:
   electroabsorption;energy gap;gallium arsenide;III-V semiconductors;indium compounds;nonlinear optics;optical modulation;