Papers Published
Abstract:
This study demonstrates the stacking of a GaAs-based thin film emitter directly on top of a InGaAs-based thin film photodetector which is integrated directly onto a Si CMOS transceiver circuit. This is the first demonstration of a mixed material 3D thin film device stack and a 3D device stack integrated onto a Si CMOS integrated circuit
Keywords:
CMOS integrated circuits;gallium arsenide;III-V semiconductors;indium compounds;integrated optoelectronics;optical fibre networks;optical receivers;photodetectors;silicon;thin film devices;transceivers;