Papers Published

1. Camperi-Ginestet, C. and Jokerst, N.M. and Augustine, G. and Hargis, M. and Allen, M., Alignable deposition of thin film semiconductor materials for integrated micro-opto-electronic systems, Smart Materials Fabrication and Materials for Micro-Electro-Mechanical Systems (1992), pp. 131 - 6 .
   (last updated on 2007/04/16)

   Abstract:
   The selective and alignable deposition of patterned thin film epitaxial GaAs/GaAlAs and InP/InGaAsP devices onto host substrates such as silicon for low cost hybrid integrated micro-opto-electronic systems is reported. Using a combination of semiconductor etch layers and selective etches, the epilayers can be separated from the growth substrate. The authors use a thin polyimide diaphragm as the transparent transfer medium for these epitaxial materials and devices. Each of these thin film devices or a group of these devices on the polyimide is optically aligned and selectively deposited onto the host substrate. Using the technique, GaAs and InP-based light emitting diodes and optical detectors which are microns thick were grown on lattice matched GaAs and InP substrates, lifted off, aligned and selectively deposited onto a silicon host substrate. The devices were then electrically contacted and tested using standard microelectronic fabrication and testing techniques. This method also enables the manufacturable, sparse distribution of costly photonic devices or the deposition of aligned arrays of devices to fabricate larger arrays. The integration of these light weight devices with microsensors and microactuators will foster micro-opto-electro-mechanical integration

   Keywords:
   aluminium compounds;epitaxial growth;etching;gallium arsenide;gallium compounds;III-V semiconductors;indium compounds;integrated circuit technology;integrated optoelectronics;light emitting diodes;micromechanical devices;photodetectors;semiconductor epitaxial layers;semiconductor growth;