Papers Published

1. Indal Song and Sang-Woo Seo and Seokhun Hyun and Daeik Kim and Sa Huang and Brooke, M. and Jokerst, N.M. and Brown, A., A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections, 2004 IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581), vol. Vol.2 (2004), pp. 517 - 18 .
   (last updated on 2007/04/16)

   Abstract:
   A wideband preamplifier is designed and fabricated using a 0.18 μm CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported

   Keywords:
   CMOS integrated circuits;gallium arsenide;III-V semiconductors;indium compounds;integrated optoelectronics;metal-semiconductor-metal structures;optical interconnections;photodetectors;preamplifiers;semiconductor thin films;wideband amplifiers;