Papers Published

1. Lee, K. and Seo, S. and Vrazel, M. and Huang, S. and Doolittle, W. and Jokerst, N. and Brown, A., GaN thin film material bonded to host substrates using selective chemical etching, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2 (2000), pp. 559 - 560 [LEOS.2000.893964] .
   (last updated on 2007/04/16)

   Abstract:
   GaN-based materials and devices are drawing significant interest for ultraviolet and blue optical device applications, and high power electronic device applications. An alternative approach toward GaN thin film separation and integration on dissimilar materials is presented and demonstrated.

   Keywords:
   Semiconducting gallium compounds;Substrates;Etching;Lithium compounds;Sapphire;Epitaxial growth;X ray analysis;