Papers Published
Abstract:
A wideband preamplifier was designed and fabricated using a 0.18 μm CMOS technology. The amplifier was heterogeneously integrated with a thin film InGaAs inverted photodetector. A successful demonstration at a bit rate of 10 Gbps was reported. All the stages were designed and laid out in a fully differential manner to ensure good immunity.
Keywords:
Electric impedance;CMOS integrated circuits;Photodetectors;Optical interconnects;Spurious signal noise;Electric loads;Logic design;