Papers Published
- Vendier, Olivier and Jokerst, Nan Marie and Leavitt, Richard P., High efficiency, high speed GaAs thin film inversed MSM photodetectors,
Conference on Lasers and Electro-Optics Europe - Technical Digest
(1996),
pp. 307 - .
(last updated on 2007/04/16)Abstract:
MSM photodetectors are attractive for integration with receiver circuits since they have lower capacitance p-i-n detectors with the same surface area. Low external quantum efficiency however, is a disadvantage of MSMs. Several research teams had investigated novel ways to enhance the quantum efficiency such as transparent indium tin oxide electrodes (ITO-MSM), and a Bragg mirror on the bottom to define a Fabry-Perot cavity. In this article, inverted MSMs (I-MSMs), with metallized fingers on the bottom of the MSMs, are reported at 950 nm in GaAs/AlGaAs, with record external quantum efficiency for normal incidence MSMs at this speed.Keywords:
Thin films;Semiconducting gallium arsenide;Efficiency;Integrated circuits;Capacitance;Quantum efficiency;Indium compounds;Electrodes;Mirrors;Heterojunctions;Resonance;Substrates;