Papers Published

1. Seo, S. and Kang, S. and Huang, S. and Lee, K. and Doolittle, W. and Jokerst, N. and Brown, A. and Brooke, M., Thin film GaN metal-semiconductor-metal photodetectors integrated onto silicon, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (2002), pp. 630 - 631 [CLEO.2002.1034409] .
   (last updated on 2007/04/16)

   Abstract:
   The metal-semiconductor-metal (MSM) photodetector dark current and responsivity results for the growth of gallium nitride on lithium gallate substrates were reported. The heterogeneous integration of thin film gallium nitride MSM detectors onto host substrates was discussed. It was found that the dark current before and after bonding is competitive and does not change significantly after integration.

   Keywords:
   Thin films;Gallium nitride;Semiconducting silicon;Lithium compounds;Crystal growth;Etching;Molecular beam epitaxy;Photolithography;Inductively coupled plasma;