Papers Published

1. Twyford, E.J. and Kohl, P.A. and Jokerst, N.M. and Hartman, N.F., The resolution of holographic photoelectrochemical etching of gratings, Proceedings of the Symposia on Reliability of Semiconductor Devices/Interconnections and Dielectric Breakdown for Microelectronic Applications (1992), pp. 306 - 11 .
   (last updated on 2007/04/16)

   Abstract:
   Submicron optical diffraction gratings were photoelectrochemically etched on n-GaAs. The effect of electrolyte temperature on the grating amplitude modulation was investigated experimentally and related to expressions for the reaction rate. The effect of temperature was investigated by etching 0.28 μm gratings at 5 different temperatures. A 25°C increase in the etching temperature improved the grating amplitude modulation by 2.8 X

   Keywords:
   etching;gallium arsenide;holographic gratings;III-V semiconductors;optical workshop techniques;photochemistry;semiconductor-electrolyte boundaries;