Publications [#66850] of Adrienne D. Stiff-Roberts
- Chakrabarti, S. and Bhattacharya, P. and Stiff-Roberts, A.D. and Lin, Y.Y. and Singh, J. and Lei, Y. and Browning, N., Intersubband absorption in annealed InAs/GaAs quantum dots: A case for polarization-sensitive infrared detection,
Journal of Physics D: Applied Physics, vol. 36 no. 15
pp. 1794 - 1797 
(last updated on 2007/04/16)
We have studied the characteristics of intersubband absorption of polarized infrared (IR) radiation in as-grown and annealed self-organized InAs/GaAs quantum dots. It is observed that with the increase of annealing time and temperature, the dots tend to flatten and behave more like quantum wells. As a result, their sensitivity to TE (in-plane)-polarized light decreases and that to TM (out-of-plane)-polarized light increases. The effect could be utilized for the realization of polarization-sensitive IR detectors.
Semiconducting indium compounds;Semiconducting gallium arsenide;Infrared detectors;Light polarization;Annealing;