Publications [#163020] of April S. Brown
- K. S. Mckay and F. P. Lu and J. Kim and C. H. Yi and A. S. Brown and A. R. Hawkins, Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction,
Applied Physics Letters, vol. 90 no. 22
(May, 2007), ISSN 0003-6951
(last updated on 2009/09/08)
p-type InGaAs/Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and -0.1 eV, respectively, indicating a type-II band alignment. (C) 2007 American Institute of Physics.