Publications [#71354] of Jungsang Kim

Papers Published

1. McKay, K.S. and Lu, F.P. and Jungsang Kim and Changhyun Yi and Brown, A.S. and Hawkins, A.R., Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction, Appl. Phys. Lett. (USA), vol. 90 no. 22 (2007), pp. 222111 - 1, ISSN 0003-6951 [1.2745254]
   (last updated on 2007/11/03)

   Abstract:
   p-type InGaAs/Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and -0.1 eV, respectively, indicating a type-II band alignment.

   Keywords:
   chemical interdiffusion;conduction bands;elemental semiconductors;gallium arsenide;III-V semiconductors;indium compounds;interface states;semiconductor heterojunctions;silicon;thermionic electron emission;valence bands;