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Publications [#64721] of Hisham Z. Massoud

Papers Published

  1. Kim, Y. and Massoud, H.Z. and Fair, R.B., Boron profile changes during low-temperature annealing of BF2+-implanted silicon, Appl. Phys. Lett. (USA), vol. 53 no. 22 (1988), pp. 2197 - 9 [1.100505]
    (last updated on 2007/04/15)

    BF2+ ions were implanted in (100) silicon at room temperature with an energy of 40 keV through a 140- Å-thick SiO2 layer. Boron profiling by secondary-ion mass spectrometry indicates that subsequent annealing in a conventional furnace in the 650-850°C range for 30-240 min results in a pronounced secondary peak in the B and F profiles, in addition to the near-surface primary peak located in the vicinity of the projected range of the implanted species. This phenomenon was also observed in BF2+-implanted samples which were rapid thermal annealed at 900°C for 15-60 s. The depths of the secondary peaks in the B and F profiles correspond to the depths of a damaged layer observed by cross-sectional transmission electron microscopy. Isochronal furnace annealing revealed that there is no chemical interaction between B and F atoms during annealing. This is also supported by the observation of F atoms not affecting the B segregation coefficient during oxidation of the BF2+-implanted samples. The end-of-range extended dislocations appear to be responsible for the gettering of B and F atoms during annealing

    annealing;elemental semiconductors;impurity distribution;ion implantation;secondary ion mass spectra;silicon;transmission electron microscope examination of materials;

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