Research Interests for Hisham Z. Massoud

Professor Massoud is interested in ultrathin gate dielectrics for CMOS ULSI. His interest span the technology, phyiscs, modeling, simulation, and characterization of ultrathin-oxide MOSFETs. He has led a research program in the modeling and simulation of quantum-mechanical carrier tunneling in ultrathin gate dielectrics. He is interested in the effects of gate tunneling on the static, dynamic, and power performance of future generation of MOS integrated circuits. He is also interested in the modeling and simulation of nanoelectronic devices.

Keywords:

Semiconductors, Devices, Circuits, Microelectronics, Nanoelectronics, MOS, CMOS

Current projects:

Carrier tunneling effects on static and dynamic integrated circuit performance.

Areas of Interest:

Carrier tunneling in MOS devices
Semiconductor devices
Integrated circuits
MOS device physics, modeling, and simulation
MOS device characterization and metrology
Microelectronics and Nanoelectronics

Recent Publications

1. Massoud, Hisham Z., Growth kinetics and electrical properties of ultrathin silicon-dioxide layers, ECS Transactions, vol. 2 no. 2 (2006), pp. 189 - 203, Denver, CO, United States [abs]
2. Oliver, Lara D. and Chakrabarty, Krishnendu and Massoud, Hisham Z., An evaluation of the impact of gate oxide tunneling on dual-V _t-based leakage reduction techniques, Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, vol. 2006 (2006), pp. 105 - 110, Philadelphia, PA, United States [abs]
3. Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, edited by Massoud, H.Z.;Stathis, J.H.;Hattori, T.;Misra, D.;Baumvol, I.;, ECS Transactions, vol. 1 no. 1 (2005), pp. 310 -, Los Angeles, CA, United States [abs]
4. Shen, M. and Jopling, J. and Massoud, H.Z., On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs, Meeting Abstracts, vol. MA 2005-02 (2005), pp. 1474 -, Los Angeles, CA, United States [abs]
5. Shen, M.Y.C. and Jopling, J. and Massoud, H.Z., On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs, ECS Transactions, vol. 1 no. 1 (2005), pp. 283 - 294, Los Angeles, CA, United States [abs]